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BBO for EO

BBO for EO
BBO for EO

BBO has significant advantages over other materials in terms of laser power handling ability, temperature stability, and substantial freedom from piezoelectric ringing. Over the past decade BBO has become the material of choice for high power high repetition rate Pockels cells at a very wide wavelength range from 200 nm to 2500 nm. 

Investigation of BBO as a Q-Switch for High-Power Applications

Learn more about the electro-optic effect   

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Structural and Physical Properties:
 

Crystal Structure Trigonal, space group R3c, Point group 3m
Cell Parameters a = b = 12.532 Å, c = 12.717Å, Z = 6
Melting Point 1095 °C
Transition Temperature 925 °C
Mohs Hardness 4
Density 3.85 g/cm3
Specific Heat 1.91 J/cm3 x K
Hygroscopic Susceptibility Low
Thermal Expansion Coefficients a, 4 x 10-6 /K;  c, 36 x 10-6 /K
Thermal Conductivity ⊥c, 1.2 W/m/K;  //c, 1.6 W/m/K



Linear Optical Properties:
 

Transparency Range 189-3500 nm
Optical Homogeneity δn ~ 10-6 /cm
Absorption Coefficient < 0.1% /cm (at 1064 nm)
Sellmeier Equations
 (λ in µm)
no2=2.7359+0.01878/(λ2-0.01822)-0.01354λ2
ne2=2.3753+0.01224/(λ2-0.01667)-0.01516λ2

Refractive Indices
               at 1064 nm 
               at 800 nm
               at 532 nm 
               at 400 nm
               at 266 nm  

 
no = 1.6545, ne = 1.5392

no = 1.6606, ne = 1.5444
no = 1.6742, ne = 1.5547
no = 1.6930, ne = 1.5679
no = 1.7585, ne = 1.6126
Thermo-optic Coefficients dno/dT = -9.3 x 10-6 /°C
dne/dT = -16.6 x 10-6 /°C



Nonlinear Optical Properties:
 

Phase-matchable SH Wavelengths: 189 - 1750 nm
NLO Coefficients
(x//m)
d11 = 5.8 x d36(KDP) =2.26 pm/V
d31
-0.05 x d11 = -0.11 pm/V
Effective Nonlinearity Expressions dooe = d11 cos3φ * cosθ - d31 sinθ
deoe = d11 sin3φ * cos2θ
Electro-optic Coefficients γ11 = 2.7 pm/V, γ13, γ33 < 0.1 γ11
Half-wave Voltage 48 kV (at 1064 nm)
Damage Threshold at 1064 nm
(for reference only)
 5 GW/cm2 (TEM00 mode, 10 ns, 10Hz)
 * The actual beam profile, thermal management, lab humidity/cleanliness can affect the damage threshold significantly. 

 


Specifications of BBO EO components:
 

Wavefront Distortion: Less than λ/8  @ 633 nm
Dimension Tolerance:  (W+/-0.1 mm) x (H+/-0.1 mm) x (L+0.5/-0.1 mm)
Clear Aperture: > 85% central area
Flatness: Better than λ/8 @ 633 nm
Surface Quality:  Scratch/Dig 10/5 per MIL-O-13830A
Parallelism:     Better than 20 arc seconds
Perpendicularity:      5 arc minutes
Angle Tolerance:      Δθ < 0.25o, Δφ < 0.25o


Coatings:

Uncoated crystals or crystals with high quality AR coatings are available upon request.

AR Coatings: R < 0.2% at the central wavelength,
Broadband AR: R < 1% over the specified range.

 


Half Wavelength Votages: 
 

Part No. Description Vπ (kV)
EOB3150-AR1064 BBO crystal for E-O application, z-cut, size 3x3x15 mm, z-faces AR coated @ 1064 nm,x-faces Au coated for electrodes 4.4
EOB3180-AR1064 BBO crystal for E-O application, z-cut, size 3x3x18 mm, z-faces AR coated @ 1064 nm, x-faces Au coated for electrodes 3.6
EOB3200-AR1064 BBO crystal for E-O application, z-cut, size 3x3x20 mm, z-faces AR coated @ 1064 nm,  x-faces Au coated for electrodes  3.3
EOB3250-AR1064 BBO crystal for E-O application, z-cut, size 3x3x25 mm, z-faces AR coated @ 1064 nm,  x-faces Au coated for electrodes  2.6
EOB4250-AR1064 BBO crystal for E-O application, z-cut, size 4x4x25 mm, z-faces AR coated @ 1064 nm,  x-faces Au coated for electrodes 3.5
EOB6250-AR1064 BBO crystal for E-O application, z-cut, size 6x6x25 mm, z-faces AR coated @ 1064nm,  x-faces Au coated for electrodes 5.2

 

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