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BBO Crystals for E-O Devices 

BBO has significant advantages over other materials in terms of laser power handling ability, temperature stability, and substantial freedom from piezoelectric ringing. It has become the  material of choice for high average power Pockels cell applications at the wavelength range from 200nm to 2500nm. It has electro-optic coefficients γ11=2.7pm/V and γ22, γ31<0.1γ11 and can be used for Q-switching diode pumped Nd:YAG lasers with average power > 50W.

Investigation of BBO as a Q-Switch for High-Power Applications

Learn more about the electro-optic effect   

NanoSwitch Series Pockels Cells

Newlight Photonics Inc. provides high quality BBO crystals with Z-cut, AR-coating and Au-electrodes for high power applications. 

Standard Products

Part No. Dimension Cut End faces Side Vπ Vπ/2
EOC00 3x3x15mm Z-cut AR@1064nm Au on X face 8.7kV 4.4kV
EOC01 3x3x18mm Z-cut AR@1064nm Au on X face 7.2kV 3.6kV
EOC02 3x3x20mm Z-cut AR@1064nm Au on X face 6.5kV 3.3kV
EOC03 3x3x25mm Z-cut AR@1064nm Au on X face 5.2kV 2.6kV

Specifications of Finished Products

Transmitting wavefront distortion: less than λ/8 @ 633nm
Flatness:
λ/8 @ 633nm
Scratch/Dig code: 10/ 5 to MIL-O-13830A
Parallelism: better than 20 arc seconds
Perpendicularity: 5 arc minutes
Angle tolerance:
Δθ < +/-0.5 deg, Δφ < +/-0.5 deg

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